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May/2008
MITSUBISHI SEMICONDUTOR

MGF4935AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.)
Fig.1
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel 3000pcs/reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
(Ta=25C )
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
Ratings -3 -3 IDSS 50 125 -55 to +125
(Ta=25C )
Unit V V mA mW C C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IGSS IDSS VGS(off) Gs NFmin. Parameter
Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Minimum noise figure
Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V, ID=10mA,f=12GHz -3.5 -12 -0.1 11.0 --
Limits TYP. ----12.0 0.45 MAX -50 60 -1.5 -0.65
Unit V A mA V dB dB
MITSUBISHI
(1/6)
May/2008
MITSUBISHI SEMICONDUTOR

MGF4935AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
Fig.1
0.30
+0.1 -0.05
2.10 0.1 1.30 0.05 (0.65) (0.65) 0.30 -0.05
+0.1
0.1
2.05
1.25
Top
0.1
0.40
+0.1 -0.05
+0.1 0.30 -0.05
0.11 -0
+0.05
(0.60) (0.65) 0.49 0.05 1.25 0.05
Side
Unit: mm
(0.85)
Bottom
Gate Source Drain
(GD-30)
MITSUBISHI
(2/6)
May/2008
MITSUBISHI SEMICONDUTOR

MGF4935AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
TYPICAL CHARACTERISTICS (Ta=25C)
ID vs. VDS
50
(VGS=~0.1V/STEP)
ID vs. VGS
50
(VDS=2V)
Drain Current, I D(mA)
Drain Current, I D(mA)
40
40
30
30
20
20
10
10
0 0 1 2 3 4
0 -1.0
-0.5
0.0
Drain to Source voltage, VDS(V)
Gate to Souce voltage, VGS(V)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
Ta=25 VDS=2V f=12GHz
NF & Gs vs. ID
15 14 13 12 11 10 9 8 7
Gs
NF
6 5 4 5 10 15 20
Drain current, ID (mA)
MITSUBISHI
(3/6)
Associated Gain, Gs (dB)
Noise Figure, NF (dB)
May/2008
MITSUBISHI SEMICONDUTOR

MGF4935AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
S11 (mag) (ang) 0.990 -13.4 0.964 -26.9 0.923 -40.6 0.866 -54.5 0.804 -68.1 0.734 -82.3 0.659 -96.5 0.582 -111.0 0.507 -126.1 0.438 -142.0 0.381 -158.6 0.340 -178.7 0.319 158.0 0.327 133.9 0.370 112.0 0.440 93.2 0.520 78.4 0.601 64.0 0.672 50.4 0.737 38.9 0.800 30.7 0.847 27.2 0.886 25.8 0.920 23.1 0.948 16.5 0.954 3.1
S21 (mag) (ang) 4.592 164.5 4.545 149.2 4.476 134.3 4.463 119.5 4.370 105.1 4.241 91.0 4.113 77.4 3.965 64.0 3.804 51.4 3.660 38.9 3.548 26.9 3.440 14.7 3.355 2.2 3.276 -10.8 3.191 -24.0 3.080 -37.9 2.914 -51.9 2.690 -66.0 2.405 -78.6 2.146 -88.9 1.931 -99.1 1.738 -108.8 1.574 -118.1 1.459 -127.4 1.382 -137.6 1.332 -150.9
S12 (mag) (ang) 0.013 80.2 0.027 71.6 0.039 62.7 0.051 54.6 0.061 46.8 0.069 39.3 0.076 33.2 0.082 28.2 0.086 24.0 0.091 20.9 0.097 19.0 0.106 16.9 0.118 13.2 0.131 8.5 0.146 2.8 0.159 -4.2 0.173 -11.5 0.183 -19.4 0.190 -27.1 0.195 -34.2 0.197 -42.0 0.196 -49.0 0.195 -55.9 0.193 -61.4 0.202 -67.4 0.213 -77.2
S22 (mag) 0.669 0.658 0.636 0.603 0.569 0.529 0.488 0.446 0.404 0.368 0.338 0.320 0.303 0.300 0.307 0.327 0.369 0.419 0.472 0.510 0.548 0.582 0.619 0.652 0.693 0.730
(ang) -10.6 -21.3 -31.2 -41.8 -51.7 -61.1 -69.7 -77.6 -84.9 -91.9 -99.5 -109.4 -120.9 -137.1 -157.2 179.4 157.8 137.5 122.4 110.5 98.5 83.9 68.2 52.9 40.5 31.4
Noise Parameter
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14
(VDS=2V,ID=10mA, Ta=room temperature)
NFmin Rn opt (dB) (mag) (ang) () 0.20 0.99 3.1 18.0 0.20 0.98 8.3 16.5 0.21 0.98 14.9 15.0 0.22 0.97 20.4 13.5 0.24 0.95 30.4 12.0 0.26 0.90 41.5 10.5 0.29 0.83 52.7 9.0 0.31 0.71 68.0 7.0 0.34 0.60 83.3 5.5 0.37 0.50 99.7 4.0 0.40 0.41 117.8 3.0 0.44 0.33 137.8 2.5 0.47 0.27 162.0 2.5 0.51 0.24 -178.1 2.5 Note ; Rn is normalized by 50 ohm.
Reference point
Gate
Reference point
Drain 0.96 45
2.5mm
Board: r=2.6 Thickness: 0.4mm (4-0.4: through-hole)
MITSUBISHI
(4/6)
May/2008
MITSUBISHI SEMICONDUTOR

MGF4935AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
S PARAMETERS
(VDS=0V,VGS=0V,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.999 -11.6 0.996 -24.0 0.990 -36.5 0.988 -50.0 0.981 -64.3 0.972 -79.2 0.958 -95.5 0.944 -113.8 0.918 -133.8 0.896 -155.7 0.881 -179.8 0.865 154.3 0.863 127.9 0.873 103.1 0.885 82.6 0.901 66.1 0.912 52.7 0.922 40.6 0.926 28.9 0.933 19.0 0.941 12.3 0.942 10.5 0.943 10.3 0.958 9.3 0.970 3.2 0.951 -10.3 S21 (mag) (ang) 0.008 97.0 0.018 98.4 0.032 97.9 0.050 94.7 0.073 87.6 0.099 79.4 0.130 69.2 0.165 58.0 0.200 45.6 0.235 32.2 0.269 17.4 0.292 2.2 0.306 -13.3 0.306 -28.4 0.294 -41.6 0.280 -52.6 0.264 -61.5 0.252 -69.0 0.242 -76.7 0.224 -84.1 0.210 -89.8 0.193 -94.8 0.176 -100.3 0.163 -103.8 0.158 -109.2 0.151 -117.4 S12 (mag) (ang) 0.008 96.6 0.018 100.0 0.032 98.7 0.050 94.7 0.074 87.8 0.100 79.7 0.130 69.1 0.165 58.2 0.200 45.8 0.237 32.2 0.269 17.5 0.294 2.2 0.307 -13.6 0.307 -28.4 0.295 -41.5 0.280 -52.5 0.265 -61.5 0.252 -69.0 0.242 -76.8 0.225 -83.9 0.210 -89.2 0.193 -94.7 0.175 -100.9 0.163 -103.9 0.157 -109.0 0.149 -118.2 S22 (mag) 0.648 0.648 0.652 0.664 0.674 0.682 0.693 0.706 0.717 0.725 0.732 0.739 0.747 0.751 0.755 0.764 0.768 0.778 0.784 0.777 0.761 0.749 0.743 0.755 0.781 0.789 (ang) 168.2 156.5 144.6 133.1 121.4 109.6 97.9 87.1 76.9 67.5 59.1 51.4 44.3 36.9 29.4 22.4 16.4 12.5 11.1 10.0 6.6 -0.3 -9.5 -19.4 -28.9 -36.1
(VDS=0V,VGS=-2V,Ta=room temperature)
Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.997 -9.0 0.997 -18.1 0.997 -27.7 0.993 -37.3 0.988 -47.1 0.985 -57.4 0.972 -68.0 0.973 -79.2 0.956 -91.8 0.942 -104.7 0.938 -119.1 0.934 -136.1 0.928 -156.1 0.935 -178.9 0.939 155.9 0.943 130.2 0.949 105.8 0.952 83.3 0.957 63.4 0.963 46.8 0.972 35.0 0.970 29.8 0.967 27.0 0.974 24.0 0.983 17.1 0.960 2.8 S21 (mag) (ang) 0.022 81.0 0.045 70.6 0.068 60.4 0.092 50.9 0.116 40.8 0.139 30.9 0.162 19.9 0.184 8.1 0.201 -4.1 0.216 -17.7 0.221 -32.2 0.217 -47.7 0.201 -65.7 0.170 -85.7 0.119 -107.4 0.057 -127.3 0.005 -25.0 0.051 6.5 0.086 -4.4 0.115 -16.6 0.133 -29.5 0.143 -40.0 0.145 -49.6 0.149 -56.9 0.159 -64.6 0.168 -75.8 S12 (mag) (ang) 0.023 79.7 0.045 70.6 0.068 61.1 0.092 50.6 0.116 40.9 0.139 30.6 0.162 19.8 0.185 8.1 0.202 -4.2 0.216 -17.8 0.220 -32.3 0.218 -47.8 0.201 -65.7 0.169 -85.7 0.119 -107.2 0.057 -127.6 0.005 -27.7 0.050 7.1 0.086 -4.4 0.115 -16.8 0.132 -28.8 0.143 -39.8 0.147 -49.5 0.149 -57.0 0.159 -64.7 0.168 -75.4 S22 (mag) 0.997 0.995 0.993 0.987 0.980 0.979 0.974 0.966 0.957 0.950 0.942 0.942 0.934 0.941 0.945 0.954 0.963 0.970 0.978 0.976 0.961 0.951 0.941 0.953 0.974 0.990 (ang) -9.9 -19.8 -29.2 -39.0 -49.4 -59.2 -69.1 -79.5 -89.9 -101.6 -114.0 -127.8 -143.2 -161.1 179.1 158.6 139.9 123.7 112.1 101.9 90.3 76.5 61.2 46.5 33.8 24.2
MITSUBISHI
(5/6)
May/2008
MITSUBISHI SEMICONDUTOR

MGF4935AM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
MITSUBISHI
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